| PART |
Description |
Maker |
| 1N822 1N822-1 1N822A 1N824 1N824-1 1N824A 1N821-1 |
Bobbins Transformer; Supply Voltage:230V; Power Rating:2.5VA; Mounting Type:PCB Surface; Approval Bodies:cURus; External Depth:1.375"; External Height:0.813"; External Width:1.125"; Frequency:60GHz; Leaded Process Compatible:Yes
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.55 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
TRANSF 17VAC .34A FLAT PACK PW 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
0TC Reference Voltage Zener 0TC参考电压稳
Cleaning Compound; Dispensing Method:Spray; For Use With:Static Control Mats and Work Surfaces; Volume:1quart (US) RoHS Compliant: NA
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
|
Coilcraft, Inc.
Microsemi, Corp.
TOKO, Inc.
MICROSEMI[Microsemi Corporation]
|
| MPXV2010DP MPXV2010GP MPX2010 MPX2010D MPX2010DP M |
Compensated Pressure Sensor
10 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MP3V5050V MP3V5050VC6T1 MP3V5050VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| 1N945B-1 1N943B-1 1N943A 1N943 1N942B-1 1N942A 1N9 |
Temperature Compensated Zener Reference Diodes(娓╁害琛ュ?榻?撼?哄?浜??绠?
Temperature Compensated Zener Reference Diodes(温度补偿齐纳基准二极
11.12-12.28 zener diode
11.7 VOLT NOMINAL ZENER VOLTAGE
|
Compensated Deuices Inc...
Microsemi Corporation
CDI-DIODE[Compensated Deuices Incorporated]
N.A.
Compensated Devices Incorporated
|
| CPT-13-6037 CPT-13-6028 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-8-2024 |
Temperature Compensated Power Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TPT-18-6037 TPT-18-6027 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TPT-18-6036 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TPT-18-6019 TPT-18-6018 |
Temperature Compensated Power Amplifier 6 GHz - 18 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| MPXM2010 MPXM2010D MPXM2010DT1 MPXM2010GS MPXM2010 |
10 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS
From old datasheet system
10 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors
|
Motorola, Inc
|
| MPX2202GP MPX2202ASX MPX2202D MPX2202DP MPX2202AP |
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa片内温度补偿和校准硅压力传感
200kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors(200kPa???娓╁害琛ュ??????????浼????
|
飞思卡尔半导体(中国)有限公司
椋???″????浣?涓??)??????
|
| MPXV5050G MPX5050 |
MPX5050 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
From old datasheet system
Integrated Silicon Pressure Sensor On-Chip Signal Conditioned,Temperature Compensated and Calibrated
|
Motorola
|
